国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8）
IPC小类 C30B（8）
IPC C30B025/18（4） H01L021/205（4） C01B031/04（3）
C30B029/02（3） H01L021/02（3） H01L021/20（3）
H01L033/00（3） B82Y030/00（2） B82Y040/00（2）
C01B031/02（2） C23C016/26（2） C30B001/02（2）
C30B025/02（2） C30B025/04（2） H01L021/36（2）
发明人 FAN S（3） WEI Y（3） CHAI Z（2）
FAN F Y（2） GI Y（2） HAN D（2）
HAO Y（2） NING J（2） WANG D（2）
YAN Y（2） ZHANG J（2）
公开年 2013（5） 2012（2）
申请年 2012（8）
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） UNIV TSINGHU.（3） UNIV XIDIAN（3）

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y