国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C23（4）
IPC小类 C30B（6）
IPC C30B025/18（6）
发明人 CHEN Z（2） SUI Y（2） WANG H（2）
XIE X（2） YU G（2） YU Q（2）
ZHANG H（2） ZHANG X（2） ZHANG Y（2）
公开年 2022（2）
申请年 2015（2）  2022（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparation of double-layer torsion angle graphene monocrystalline wafer, by annealing copper-nickel monocrystalline substrate in chemical vapor deposition furnace under gas atmosphere of argon and hydrogen to improve crystal quality, and growing under atmosphere of argon, hydrogen and methane.

XIE X, YU Q, ZHAO Y, ZHANG X

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G