国家/地区 日本（4） 美国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 韩国（3） 台湾（3） 英国（2） 印度（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（6）
发明人
公开年 2015（2）
申请年
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V