国家/地区 美国（19）
IPC部 C（19）
IPC大类 C01（19） C30（19） B82（12）
H01（11） B32（5） C23（3）
B01（2）
IPC小类 C01B（19）
IPC C01B032/184（19）
发明人 JANG B Z（5） XIONG W（3） ZHAMU A（3）
AHMED M（2） BERRY V（2） IACOPI F（2）
SEACRIST M R（2）
公开年 2013（3） 2016（3） 2017（3） 2018（3） 2020（2） 2021（2）
申请年 2016（3）  2017（3）  2011（2）  2013（2）  2014（2）  2015（2）  2020（2） 
专利权人 NANOTEK INST.（5） GLOBAL GRAPH.（2） JANG B Z（2） SUNEDISON SE.（2）
UNIV GRIFFIT.（2） UNIV SYDNEY .（2） XIONG W（2） ZHAMU A（2）

Synthesis of electrochemically exfoliated graphene used as e.g. catalyst support, involves applying electrochemical intercalation current to graphite sample to provide hydroxide intercalated graphite, exchanging basic aqueous intercalation electrolyte, and exfoliating intercalated graphite.

ROBERTS E, SINGH A

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Producing graphene/metal nanowire hybrid material composition for electrode of lithium battery by preparing a catalyst metal-coated mixture mass and exposing catalyst metal-coated mixture mass to high temperature environment.

JANG B Z

Production of graphene/semiconductor nanowire hybrid material composition for electrode, involves preparing catalyst metal-coated mixture using semiconductor particles made of e.g. tin and/or indium, and growing semiconductor nanowires.

JANG B Z

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C