国家/地区 中国（8） 美国（8） 世界知识产权组织（7） 欧洲专利局（EPO）（4） 韩国（3） 日本（2）
IPC部 C（15）
IPC大类 C30（15） C01（10） H01（6）
B82（4） B32（3）
IPC小类 C30B（15）
IPC C30B001/10（15）
发明人 IACOPI F（2）
公开年 2014（3） 2022（3） 2012（2） 2023（2）
申请年 2021（4）  2014（3）  2022（2） 
专利权人 UNIV SYDNEY .（2）

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Preparation method of high-pressure single crystal lithium vanadium fluorophosphate positive electrode material used in field of lithium ion battery, involves mixing vanadium phosphate with lithium fluoride, supplementary fluorine source, flux, carbon source, and ball-milling dispersant.

SONG M, WEI J, DU N

Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.

ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Method for manufacturing single-crystal graphene sheet, involves heat treating catalyst layer and carbonaceous material in one of inert atmosphere and reducing atmosphere to form single-crystal graphene sheet.

CHOI J, SHIN H, YOON S, HAN J

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T