国家/地区 美国（6）
IPC部 C（6）
IPC大类 C30（6） H01（5） C23（4）
B82（3） C01（2）
IPC小类 C30B（6）
IPC C30B025/04（6）
发明人 FAN S（2） WEI Y（2）
公开年 2013（3）
申请年 2012（3） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M