国家/地区 中国（15） 美国（14） 世界知识产权组织（9） 韩国（7） 欧洲专利局（EPO）（4） 日本（3）
IPC部 C（27）
IPC大类 C30（27） C01（14） H01（9）
B82（8） C23（8） B01（2）
B32（2）
IPC小类 C30B（27）
IPC C30B025/10（27）
发明人 SHERRILL J V（2） SHIN H（2） SHIN H J（2）
SUN H（2） TOH C T（2）
公开年 2021（7） 2011（3） 2014（3） 2020（3） 2023（3） 2015（2） 2018（2）
申请年 2021（7）  2013（3）  2020（3）  2014（2）  2016（2）  2022（2） 
专利权人 GEN GRAPHENE.（3） SAMSUNG ELEC.（2） SUN H（2） UNIV SINGAPO.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Manufacturing two-dimensional materials, such as graphene, involves passing purge gases into gas confining space of reaction chamber, to purge gas confining space of oxygen, passing donor gas, moving carriers to pass donor gas to space, setting positive pressure in space, heating forming layers.

ERICKSON G E, SHERRILL J V

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L