国家/地区 美国（5） 中国（4） 韩国（4） 欧洲专利局（EPO）（3） 世界知识产权组织（3） 日本（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C30B025/18（7）
发明人
公开年 2017（4） 2016（3）
申请年 2016（7）
专利权人

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F