国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6）
IPC C30B025/20（6）
发明人
公开年 2021（2） 2023（2）
申请年 2021（2）  2022（2） 
专利权人

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z

Electronic device for field effect transistor, comprises body including single crystal region that has hexagonal crystal lattice substantially lattice-matched to graphene, and epitaxial layer of graphene disposed on the region.

PFEIFFER L N, PFEIFFER L