国家/地区 中国（21） 美国（9） 世界知识产权组织（8） 日本（6） 韩国（6） 台湾（3） 欧洲专利局（EPO）（2）
IPC部 C（28）
IPC大类 C30（28） C01（20） B82（9）
C23（9） H01（7） B32（3）
IPC小类 C30B（28）
IPC C30B029/02（28）
发明人 ZHANG Y（8） GUO H（7） ZHANG K（7）
DENG P（4） LEI T（4） TANG X（3）
ZHAO Y（3） BI H（2） CHAI Z（2）
HAN D（2） HAO Y（2） HUANG F（2）
LIN T（2） NING J（2） WANG D（2）
公开年 2012（14） 2013（10） 2014（4）
申请年 2012（28）
专利权人 UNIV XIDIAN（9） CHINESE ACAD.（2）

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M