国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8） C23（2）
IPC小类 C30B（8）
IPC C30B029/02（8）
发明人 LI X（8）
公开年 2013（2） 2022（2）
申请年 2013（2）  2017（2）  2021（2） 
专利权人 CHONGQING GR.（2） HANGZHOU GEL.（2） UNIV CHINA E.（2） UNIV SHANDON.（2）

Preparing near free state single-layer graphene based on silicon carbide single crystal substrate comprises e.g. pre-processing surface of silicon carbide single crystal substrate wafer, heating pre-processed substrate silicon surface, performing hydrogen etching, and obtaining substrate.

XU X, XIE X, XIAO L, SHAO C, LI X, CHEN X, ZHANG F

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source.

LI X

Preparation of single-crystal graphene comprises affixing graphite crystal to base area, coating layer with nickel and/or copper alloys, heating, annealing, cooling, immersing in iron chloride solution and removing metal layer and carbon.

LI X, LIN S

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X