国家/地区 中国（14）
IPC部 C（14）
IPC大类 C30（14） H01（11） C23（5）
IPC小类 C30B（14）
IPC C30B029/40（14）
发明人 FENG H（2） LI P（2） LIU F（2）
PAN Y（2） TANG J（2） WANG Y（2）
YANG J（2）
公开年 2022（14）
申请年 2021（7）  2022（7） 
专利权人 CEC COMPOUND.（2）

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Preparing gallium nitride single crystal substrate utilizing edge metal mask technology, comprises e.g. providing gallium nitride epitaxial film with nitrogen lattice polarity without biaxial stress, heating hydride vapor phase epitaxy cavity and trimming gallium nitride single crystal thick film.

ZHANG G, SHEN B, WU J, WANG T, GUO Y, LIU Q, LIU F, WANG X

Synthesis device for producing indium phosphide comprises shell, mounting box, rotating component and quartz tube, where two sides of bottom of shell are equipped with two groups of foot pads, one side of inside of top part is equipped.

YU H, ZHAN X, MENG K, ZHAN Z

Preparing quantum dots, comprises e.g. using two-dimensional materials to prepare two-dimensional material substrates, placing material in growth chamber, spraying raw material on surface of material, and subjecting raw material into adsorption, desorption, and growth on surface of material.

LIU F, WEI Z, YANG J, XIN K, LI L, DI S

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Epitaxially growing large area gallium nitride used in field of semiconductor comprises growing graphene two-dimensional material layer on copper (111) single crystal substrate, epitaxially growing gallium nitride film and cooling gallium nitride film to room temperature.

MA Y, YANG J, KONG W

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J