国家/地区 中国（27） 日本（17） 美国（17） 世界知识产权组织（16） 欧洲专利局（EPO）（13） 韩国（13） 加拿大（7） 台湾（3） 澳大利亚（2） 波兰（2）
IPC部 C（46）
IPC大类 C30（46）
IPC小类 C30B（46）
IPC C30B029/64（46）
发明人 LIU Z（4） SUN L（4） LIN L（3）
LIU H（3） PENG H（3） XU X（3）
BERRY V（2） CHEN X（2） CHEN Z（2）
GUO F（2） LI Y（2） LIU K（2）
MANCEVSKI V（2） SEACRIST M R（2） SIMON S M（2）
公开年 2017（8） 2021（7） 2012（4） 2018（4） 2022（4） 2013（3） 2014（3） 2015（3） 2016（3） 2023（3）
申请年 2017（7）  2021（7）  2016（5）  2020（5）  2011（4）  2013（4）  2014（3）  2015（3）  2012（2）  2022（2） 
专利权人 UNIV PEKING（7） LOCKHEED MAR.（2） MEMC ELECTRO.（2） NAMIKI SEIMI.（2）
SHANGHAI INS.（2） SUNEDISON SE.（2） UNIV KANSAS .（2） UNIV SHANDON.（2）
UNIVERSAL MA.（2）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F

Synthesis of electrochemically exfoliated graphene used as e.g. catalyst support, involves applying electrochemical intercalation current to graphite sample to provide hydroxide intercalated graphite, exchanging basic aqueous intercalation electrolyte, and exfoliating intercalated graphite.

ROBERTS E, SINGH A