国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6）
IPC C30B033/10（6）
发明人 JU Q（2） LI X（2） MA Y（2）
WANG J（2） WANG W（2）
公开年 2018（2） 2019（2）
申请年 2018（2）  2019（2） 
专利权人 SHANGHAI INS.（2）

Etching method of single-sided germanium wafer by coating photoresist on front, back and circumferential directions of germanium wafer respectively to form photoresist film, exposing photoresist film on front side, and developing.

HE Y, CHEN M, WANG Y

Single crystal silicon texturing additive comprises graphene oxide quantum dot solution comprising graphene quantum dots having specified size, surfactant, alkali metal hydroxide and/or carbonate, and deionized water.

WANG J, JU Q, MA Y, WANG W

Complex texturing additive comprises graphene, graphene oxide, surfactant, metal ion and solvent.

WANG J, JU Q, WANG W, MA Y

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Graphene oxide-based crystalline silicon fleece additive for solar cell, comprises graphene oxide dispersion and organic reagent containing pentaerythritol, anhydrous sodium acetate, polyvinyl alcohol and polyethylene glycol.

ZHANG P, ZHANG X, MA S, HU W, GUAN D, LI X

Preparation of single-crystal graphene comprises affixing graphite crystal to base area, coating layer with nickel and/or copper alloys, heating, annealing, cooling, immersing in iron chloride solution and removing metal layer and carbon.

LI X, LIN S