国家/地区 美国（5） 中国（3） 日本（2） 韩国（2）
IPC部 B（12）
IPC大类 C30（12）
IPC小类 C30B（12）
IPC B82Y040/00（4） C01B032/186（4） C30B025/18（4）
C30B029/02（4） B82Y030/00（3） B01J023/42（2）
B82Y020/00（2） C23C016/26（2） C30B029/60（2）
C30B033/02（2）
发明人
公开年 2022（6） 2021（5）
申请年 2021（12）
专利权人

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Assembly method of plant device containing lead-free double perovskite quantum dot crystal involves preparing lead-free double perovskite quantum dot crystal, packaging the lead-free double perovskite quantum dot crystal.

CHEN Q, SHI M, ZOU J, JIN D, WAN W, ZHOU Y

Long-life guide cylinder comprises e.g. outer layer as pre-oxidized felt insulating felt, middle layer as modified resin formed on inner side wall of outer layer, and inner layer as carbon/carbon composite material formed on inner side wall of middle layer.

BAI Y, QIN X, LIU Y, ZHOU J

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Fuel cell e.g. proton exchange membrane fuel cell, comprises core-shell nanostructure comprising palladium nano-substrate having cubic shape coated with uniform atomic overlayers of epitaxially deposited zero-valent platinum atoms.

ZHANG L, PARK J, WANG X, CHOI S, XIE S, XIA Y