国家/地区 日本（7）
IPC部 C（7）
IPC大类 C01（7） C30（7） H01（4）
B82（3） C23（3）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人
公开年 2013（7）
申请年 2012（4）  2011（2） 
专利权人

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M