国家/地区 中国（5） 美国（3） 日本（2） 韩国（2） 台湾（2）
IPC部 C（9）
IPC大类 C30（9） C01（5） H01（2）
IPC小类 C30B（9）
IPC C30B025/02（9）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
NING J（3） WANG D（3） YAN Y（3）
ZHANG J（3）
公开年 2014（8）
申请年 2013（9）
专利权人 UNIV XIDIAN（3）

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Growing graphene on a substrate, comprises forming a metal oxide layer on substrate using reactive metal oxide to prepare structure, and growing graphene by heat treatment, while exposing the structure to gas containing carbon.

CHOI J W

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Graphene dendrites formed by starting with graphene nuclei on solid surface extending outwardly into primary branches from which many secondary branches extend, used to form graphene plates used in e.g. photonic and electronic parts.

TZENG Y H, TZENG Y

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X