国家/地区 美国（7）
IPC部 C（7）
IPC大类 C30（7） C01（6） B82（3）
C23（3） H01（3）
IPC小类 C30B（7）
IPC C30B025/18（7）
发明人 RUOFF R S（2） TOH C T（2）
公开年 2015（7）
申请年 2013（3）  2014（3） 
专利权人 UNIV SINGAPO.（2） UNIV TEXAS S.（2）

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Making graphene film comprises configuring metal substrate to form interior surface of substrate in fluid communication with gaseous environment, loading into chemical vapor deposition apparatus, heating and providing hydrogen and carbon.

RUOFF R S, CHEN S

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A