国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C23（2） H01（2）
IPC小类 C30B（6）
IPC C30B025/18（6）
发明人 ZHANG J（2）
公开年 2020（6）
申请年 2020（3）  2018（2） 
专利权人

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y