国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7）
IPC C30B025/18（4） C30B029/02（4） C01B031/04（3）
C01B031/02（2） C01B032/182（2） C01B032/188（2）
C23C016/26（2） C30B001/02（2） H01L021/20（2）
发明人 LI L（2）
公开年 2015（7）
申请年 2015（4）  2014（3） 
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing hierarchical graphene substrate of zinc oxide arrays used for preparing zinc oxide-based ultraviolet photo-detectors, involve carrying out non-hierarchical zinc oxide chemical vapor deposition growth of graphene nanosheet.

LI L, YANG H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J