国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） H01（9） C23（3）
B82（2）
IPC小类 C30B（9）
IPC H01L021/02（5） C30B025/18（4） C30B029/38（3）
H01L033/00（3） B82Y030/00（2） B82Y040/00（2）
C23C016/34（2） C30B029/02（2） C30B033/02（2）
H01L021/20（2） H01L029/16（2） H01L031/0304（2）
H01L031/0352（2） H01L031/18（2） H01L033/06（2）
发明人 FIMLAND B M（2） LI C（2） MUNSHI M（2）
WEMAN H（2）
公开年 2021（5） 2020（4）
申请年 2020（9）
专利权人 CRAYONANO AS（2）

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Growing zinc vanadate oxide/graphene-single-walled carbon nanotubes material with ionic liquid assisted in-situ composite specific crystal surface in zinc ion battery comprises e.g. compounding zinc vanadate oxide nanowire and assembling.

SUN Y, LI C, JIN Y, FU J, WU H

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Manufacturing substrate material useful for graphene growth, comprises e.g. cutting sapphire crystal, forming sapphire plate blank, grinding sapphire sheet blank to form sapphire sheet semifinished product, and chamfering sapphire sheet.

ZHOU Z, YANG L, SHI M, LI Z

New mixed rare earth-transition element doped up-conversion laser crystal, prepared by using mixed crystal of sodium yttrium tetrafluoride and zirconium tetrafluoride, ytterbium(III) ions, erbium(III) ions and graphene quantum dots.

LI D, WANG D, XU X, WANG X, LIU J