国家/地区 中国（13） 美国（9） 日本（5） 世界知识产权组织（5） 韩国（3） 台湾（3）
IPC部 C（19）
IPC大类 C23（19）
IPC小类 C30B（19）
IPC C23C016/26（14） C30B029/02（9） C01B031/02（8）
C30B025/18（8） B82Y040/00（7） B82Y030/00（6）
C01B031/04（6） C01B032/186（4） C30B025/02（3）
H01L021/02（3） H01L021/205（3） H01L029/16（3）
C01B032/194（2） C23C016/02（2） C30B025/00（2）
发明人 DENG P（4） GUO H（4） LEI T（4）
ZHANG K（4） ZHANG Y（4） BI H（2）
DING G（2） FAN F Y（2） FAN S（2）
GI Y（2） HUANG F（2） LIN T（2）
LV J（2） WEI Y（2） XIE X（2）
公开年 2012（11） 2013（6） 2014（2）
申请年 2012（19）
专利权人 UNIV XIDIAN（5） CHINESE ACAD.（2） CHINESE ACAD.（2） HON HAI PREC.（2）
HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S