国家/地区 美国（21） 日本（16） 世界知识产权组织（16） 韩国（13） 欧洲专利局（EPO）（11） 中国（10） 台湾（6） 印度（4） 俄罗斯（4） 西班牙（3） 墨西哥（3） 法国（2） 英国（2）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28）
IPC C01B031/02（28）
发明人 VEERASAMY V（3） VEERASAMY V S（3） CHIBA Y（2）
CHIBA YOSHIHIRO（2） COJOCARU C（2）
公开年 2011（7） 2013（6） 2014（5） 2012（4） 2015（2）
申请年 2012（8）  2011（6）  2013（4）  2009（3）  2010（2）  2014（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） CENT NAT REC.（2）
DOKURITSU GY.（2） ECOLE POLYTE.（2） JX NIPPON MI.（2） NIPPON MININ.（2）
SAMSUNG TECH.（2）

Synthesis of Q-carbon, graphene and diamond used as e.g. nanodots, involves depositing amorphous carbon on substrate, melting amorphous carbon into undercooled state and quenching melted amorphous carbon from undercooled state.

NARAYAN J

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Rolled copper foil used for manufacture of graphene for e.g. mercury-free fluorescent lamp, has specified ratio of maximum value for detection strengths occurring under specified conditions based on specific direct pole figure.

CHIBA YOSHIHIRO, CHIBA Y

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J