国家/地区 中国（9）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 C23C（9）
IPC C30B025/18（7） C23C016/26（6） C30B029/02（6）
H01L021/02（3） C01B032/186（2） C23C014/06（2）
C23C014/34（2） C23C016/01（2） C23C016/02（2）
C23C016/32（2） C23C016/34（2） C23C028/00（2）
C30B025/02（2） C30B029/36（2）
发明人
公开年 2016（6） 2017（3）
申请年 2016（9）
专利权人

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z