国家/地区 中国（13） 韩国（2） 世界知识产权组织（2）
IPC部 C（14）
IPC大类 C30（14）
IPC小类 C30B（14）
IPC C30B029/02（7） C30B025/18（6） C30B025/02（3）
C01B031/04（2） C23C016/26（2） H01L021/20（2）
发明人 LI L（3） CHEN X（2） SUN L（2）
XU X（2） ZHANG Z（2） ZHAO X（2）
公开年 2015（14）
申请年 2015（14）
专利权人 SHANGHAI INS.（2） UNIV PEKING（2） UNIV SHANDON.（2）

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Preparation of single-crystal graphene involves taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding hydrogen and argon and heating.

WANG X, LI J, ZHONG Q, ZHONG Y

Regulating and controlling silicon carbide base epitaxial graphene electronic band gap comprises e.g. preparing epitaxy graphene sample, using SRIM software, using ion beam to silicon carbide base epitaxial graphene sample for irradiation.

FU G, QIN X, WANG F, ZHAO J

Preparing germanium quantum dot used in photodetector element, by cleaning substrate to remove contaminants, transferring single atomic graphene layers on cleaned substrate and growing germanium quantum dot on graphene layer.

YANG Y, WANG R, ZHANG Z, ZHANG J

Preparation of patterned graphene used for flexible electrode, field effect transistor, sensor part or display device, by forming graphite sheet target pattern into copper foil surface, heating, and growing.

DU M, FANG Y, LI L, LI X

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing hierarchical graphene substrate of zinc oxide arrays used for preparing zinc oxide-based ultraviolet photo-detectors, involve carrying out non-hierarchical zinc oxide chemical vapor deposition growth of graphene nanosheet.

LI L, YANG H