国家/地区 中国（49） 世界知识产权组织（9） 韩国（7） 日本（6） 美国（6） 台湾（4） 加拿大（2） 英国（2） 印度（2）
IPC部 C（69）
IPC大类 C30（69）
IPC小类 C30B（69）
IPC C30B025/18（27） C30B029/02（25） C30B029/40（14）
H01L021/02（14） C23C016/26（11） C30B025/16（8）
C01B032/186（7） C23C016/02（7） C30B025/00（7）
C01B032/194（6） C30B028/14（5） C01B032/182（4）
C23C014/35（4） C30B023/02（4） C30B029/04（4）
发明人 ZHANG J（5） WANG Y（4） FENG H（3）
HAO Y（3） LI L（3） LI X（3）
MA P（3） NING J（3） TANG J（3）
WANG D（3） XU X（3） YANG J（3）
ZHANG Y（3） CHEN X（2） DIXON S（2）
公开年 2022（69）
申请年 2021（37）  2022（31） 
专利权人 UNIV PEKING（3） UNIV XIDIAN（3） BEIJING GRAP.（2） BEIJING TONG.（2）
CEC COMPOUND.（2） GRAPHENE SQU.（2） PARAGRAF LTD（2） ROHM CO LTD（2）
SHANGHAI INS.（2） TOKYO ELECTR.（2） UNIV SEOUL N.（2） UNIV SHANDON.（2）

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Graphene composite comprises substrate, first thin film positioned on substrate, and second thin film positioned on first thin film, where first thin film includes graphene and second thin film includes at least any one of vanadium selenide, vanadium disulfide, vanadium ditelluride, tantalum sulfide.

CHOI B K, CHANG Y J, JANG Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B