国家/地区 中国（7）
IPC部 B（7）
IPC大类 C30（7） B82（6） C01（6）
C23（5） H01（3）
IPC小类 C30B（7）
IPC B82Y040/00（5） C01B031/04（5） B82Y030/00（4）
C30B029/02（4） C23C016/26（3） C01B031/02（2）
C01B032/186（2） C23C016/02（2） C23C016/56（2）
C30B001/02（2）
发明人 DING G（2） XIE X（2）
公开年 2012（7）
申请年 2012（5）  2011（2） 
专利权人 CHINESE ACAD.（2） DING G（2） SHANGHAI INS.（2） XIE X（2）

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Three-dimensional graphene/metal line or metal wire composite structure for solar cell and storage battery, is formed by growing graphene on outer surface of metal line by coating carbon source using chemical vapor deposition method.

BI H, HUANG F, LIN T

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Vapor phase epitaxy carbon fiber assembly used as electrode material of lithium cell, is aggregate of vapor growth carbon fiber having tubular graphene layer structure, and average fiber outer diameter in preset range.

HITOE Y, SUZUKI J, SATO H, KAWASHIMA S, SUZUKI A

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X