国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） C23（5） C01（3）
H01（2）
IPC小类 C30B（11）
IPC C30B029/04（11）
发明人 ZHANG J（2） ZHANG Y（2） ZHAO J（2）
公开年 2022（4） 2021（3）
申请年 2022（4）  2021（3） 
专利权人

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Phased array antenna useful for producing MPCVD single diamond, comprises molybdenum support provided with the driving mechanism for driving the circular plate and the temperature insulation plate provided with the cooling mechanism for cooling outside the reaction preparation tank.

HU F, ZHANG J

Diamond product with mixed dimension carbon covalent laminated structure surface layer comprises diamond matrix and mixed dimension carbon covalent laminated structure surface layer.

ZHAO G, YANG Y, WU Y, WANG R, LI L, HE N, YAN B, CHEN N

Radiating table designed with special water channel of alloy material, has heat dissipation pipe fitting to water pipe through groove, heat dissipation platform provided with several waterway annular grooves communicated with water pipe through groove.

ZHAO J, HU C, HU C Q, ZHAO J H

Single crystal diamond epitaxial growth by iridium-graphene structured buffer layer, comprises preparing layer of iridium-nickel composite patterned transition layer performing vacuum stress relief annealing and chemical vapor deposition.

LI C, XIA T, ZHENG Y, YUAN X, CHEN L, LIU J, WEI J

Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain seed crystals.

ZHU J, LI Y, DAI B, HAO X, ZHAO J, ZHANG S

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A