国家/地区 中国（21）
IPC部 C（21）
IPC大类 C30（21）
IPC小类 C30B（21）
IPC C30B029/02（13） C30B025/18（9） C23C016/26（4）
C30B025/02（4） C01B031/04（3） B82Y040/00（2）
C01B031/02（2） C01B032/182（2） C30B025/00（2）
H01L021/20（2）
发明人 CHEN X（3） LI L（3） SUN L（3）
ZHANG Z（3） CHEN Z（2） LI X（2）
LIN L（2） LIU Z（2） PENG H（2）
SUI Y（2） XU X（2） YU G（2）
ZHANG H（2） ZHANG Y（2） ZHAO X（2）
公开年 2015（13） 2016（5） 2017（3）
申请年 2015（21）
专利权人 SHANGHAI INS.（3） UNIV PEKING（3） UNIV SHANDON.（2）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparing graphene mercury cadmium telluride composite film material comprises preparing graphene composite film, then transferring graphene composite film in three stages.

LI B

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.

LIN L, LIU Z, PENG H, SUN L

Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source.

LI X

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Three-dimensional non-catalytic substrate-loading graphene film structure used for e.g. microelectromechanical system device comprises non-catalytic substrate, etched surface body three-dimensional structure and graphene thin film cover.

DU C, SHEN J, SHI H, YANG J, WEI D, YU C, SONG X, YU Y

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Preparation of single-crystal graphene involves taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding hydrogen and argon and heating.

WANG X, LI J, ZHONG Q, ZHONG Y