国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） H01（5） C01（4）
C23（3）
IPC小类 C30B（9）
IPC C30B025/18（5） C30B029/02（5） H01L021/205（4）
H01L021/20（3） H01L033/00（3） C01B031/02（2）
C01B031/04（2） C30B025/02（2） C30B025/04（2）
H01L021/02（2） H01L021/36（2）
发明人 CHAI Z（3） FAN S（3） HAN D（3）
HAO Y（3） NING J（3） WANG D（3）
WEI Y（3） YAN Y（3） ZHANG J（3）
FAN F Y（2） GI Y（2）
公开年 2013（9）
申请年 2012（9）
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） UNIV TSINGHU.（3） UNIV XIDIAN（3）

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Preparation of graphene, involves directly converting amorphous carbide into graphene at low temperature and normal pressure under halogenation condition.

MU S, PENG T

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y