国家/地区 中国（6）
IPC部 G（6）
IPC大类 G01（6）
IPC小类 G01J（6）
IPC G01J005/24（5）
发明人 WU P（6）
公开年 2021（6）
申请年 2021（6）
专利权人 BEIJING NORT.（6）

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Thermosymmetric infrared detector for use in e.g. mobile phone application field, has column-level analogue front end circuit for performing trans impedance amplification to two paths of current and outputs as output voltage.

PAN H, WU P, DI G

Infrared focal plane detector for mobile phone application field, has column-level analogue front end circuit that obtains two paths of current according to bias voltages, performs trans-impedance amplification to difference of generated two paths of current and outputs as output voltage.

WU P, PAN H, DI G

Complementary metal oxide semiconductor (CMOS) process based infrared micro-bridge detector for mobile phone application field, has column level analog front end circuit that performs transimpedance amplification on difference between two generated currents to output as output voltage.

PAN H, WU P, DI G

Complementary metal-oxide-semiconductor (CMOS) infrared detector for use in monitoring market, has column-level analog front-end circuit that obtains paths of currents according to main and sub bias voltages, and performs transimpedance amplification on difference between paths of generated current.

WU P, PAN H, DI G

Infrared detector with multilayer structure based on complementary metal-oxide semiconductor technology used in mobile phone application field, has columnar structure directly electrically connected with supporting base in reflecting layer and corresponding beam structure.

PAN H, WU P, DI G, ZHAI G