国家/地区 美国（6） 中国（2） 韩国（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 H01B（6）
IPC H01B001/04（5） B32B009/00（3） H01B013/00（3）
B32B003/00（2） B32B009/04（2） B32B015/20（2）
B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
C23F001/02（2） H01B005/14（2） H01L021/02（2）
H01L021/04（2） H01L021/324（2） H01L029/16（2）
发明人 AFZALIARDAKANI A（2） MAAROUF A（2） MARTYNA G J（2）
SAENGER K（2） YANG J（2）
公开年 2015（6）
申请年 2015（6）
专利权人 EGYPT NANOTE.（2） INT BUSINESS.（2）

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Hybrid film used in transparent conductive film application, has nanostructures that are formed on substrate, and graphene domains that are provided on substrate and nanostructures and are integrally connected to nanostructures.

GONG K

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Graphene oxide doped material for electrode of pixel structure in display device, has hetero material part formed with graphite layer and hetero layer, where graphite layer is formed with mixing layer and hetero layer.

BAI F, LIU J, YANG J