国家/地区 美国（7） 韩国（3） 中国（2） 世界知识产权组织（2）
IPC部 B（8）
IPC大类 C23（8）
IPC小类 H01B（8）
IPC H01B001/04（7） C01B031/04（4） C23C016/26（4）
B32B009/00（3） B82Y030/00（3） B82Y040/00（3）
H01B013/00（3） B05D005/12（2） B22F001/02（2）
B32B003/00（2） B32B009/04（2） B32B015/20（2）
B82B003/00（2） C23C016/02（2） C23C016/455（2）
发明人 AFZALIARDAKANI A（2） MAAROUF A（2） MARTYNA G J（2）
SAENGER K（2）
公开年 2015（4） 2016（4）
申请年 2015（8）
专利权人 EGYPT NANOTE.（2） INT BUSINESS.（2）

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Manufacture of core-shell structured nanowire e.g. copper nanowire used for transparent electrode for e.g. solar cell, involves providing metal nanowire and coating metal nanowire with graphene by plasma chemical vapor deposition.

LEE Y G, JEONG Y J, AHN Y M, LEE D H

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H