国家/地区 中国（8） 美国（4） 世界知识产权组织（4）
IPC部 H（6） G（5） B（2）
C（2）
IPC大类 H01（6） G02（3） C03（2）
IPC小类 H01L（4） G02F（3） C03C（2）
IPC H01L021/77（4） G02F001/1368（3） H01L027/02（3）
H01L029/786（3） C03C017/22（2） G02F001/1362（2）
H01L029/66（2）
发明人 DAI T（7） YAO Q（6） ZHANG F（6）
XUE J（4） LIU Z（2）
公开年 2012（8）
申请年 2011（6）  2012（2） 
专利权人 BOE TECHNOLOGY GROUP CO LTD（8）

Preparation of patterned graphene film by forming wetting area of predetermined pattern on substrate, forming non-soakage area on substrate, coating graphene oxide solution on wetting area, and performing reduction treatment.

DAI T, LIU Z, YAO Q, ZHANG F

Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.

DAI T, YAO Q, ZHANG F

Array substrate for LCD device, has thin film transistor whose pixel electrode, source electrode and drain electrode are combined together to form graphene, where pixel and drain electrodes of transistor are connected with each other.

DAI T, YAO Q, ZHANG F, DIA T

Electrostatic protective film for display device for e.g. mobile phone, has transparent substrate and graphene layer that are adhered together.

DAI T, XUE J

Manufacture of polyaniline-graphene composite material film for battery, involves using electrode modified by aniline-graphite alkene monomer as positive electrode or work electrode in acid electrolyte, and controlling thickness.

LIU Z, CHEN J

Manufacturing method of flexible thin film transistor (TFT) array substrate used in display device, involves forming graphene-containing layer on gate insulating layer to obtain graphene.

YAO Q, ZHANG F, DAI T, XUE J

LCD thin-film transistor array substrate, has gate line, data line, thin-film transistor and pixel electrode that are orderly arranged on substrate, where pixel electrode is formed with graphene thin film.

YAO Q, ZHANG F, DAI T, XUE J

Method for manufacturing thin film transistor array substrate in display device, involves forming graphene semiconductor active layer in upper part of gate electrode, and providing pixel electrode with common electrode.

YAO Q, ZHANG F, DAI T, XUE J