国家/地区 韩国（14） 美国（6） 世界知识产权组织（3） 中国（2）
IPC部 H（12） C（9） B（8）
G（2）
IPC大类 H01（12） C01（8） C23（6）
B82（5） B01（4）
IPC小类 H01L（9） C01B（8） C23C（6）
B01J（4） B82Y（4） H01B（3）
IPC C01B031/02（8） C23C016/26（6） H01L029/78（6）
H01L021/336（5） B01J019/08（3） H01B001/04（3）
B82Y040/00（2） B82Y099/00（2） C23C016/44（2）
C23C016/56（2） H01L021/00（2） H01L021/027（2）
H01L021/268（2） H01L029/786（2）
发明人 CHOI I S（5） LEE K J（5） CHOI S Y（4）
HONG B H（4） CHO B J（3） CHOI I（2）
HWANG J O（2） JEON S（2） KIM S O（2）
LEE D H（2） LEE J（2） LEE K（2）
OH S（2）
公开年 2012（15）
申请年 2011（8）  2012（4）  2010（3） 
专利权人 KOREA ADV INST SCI TECHNOLOGY（15）

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Floating gate- or charge trap-type non-volatile memory device includes gate electrode made of graphene.

CHO B J, PARK J K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Preparation of graphene composite for e.g. electrode, involves dispersing graphene oxide into solvent, forming dispersed graphene oxide on transition metal oxide or transition metal hydroxide nanoparticles and reducing in solvent.

KIM J D, LEE J W

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Manufacture of block copolymer using graphene film, involves laminating graphene oxide film on substrate, stacking laminated graphene oxide film and subjecting to self-assembly.

KIM S O, KIM B H, KIM J Y, JEONG S J, HWANG J O, LEE D H, SHIN D O

Assaying phospholipase activity, by preparing graphene oxide/carbon nanotube double layer film deposited on substrate, performing hydrolysis by spotting lipid sample on substrate, and analyzing spectrum of product by spectrometry.

MIN D H, LEE J E, KIM Y K

Graphene transistor manufacturing method involves forming drain and gate electrode on insulating layer that is laminated between source and drain regions.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H