国家/地区 中国（13） 世界知识产权组织（5） 美国（3）
IPC部 C（11） B（4） H（2）
IPC大类 C01（9） C23（6） B82（4）
C30（4） H01（2）
IPC小类 C01B（9） C23C（6） B82Y（4）
C30B（4）
IPC C01B031/04（8） C23C016/26（5） B82Y040/00（4）
C23C016/02（3） B82Y030/00（2） C30B033/02（2）
发明人 XIE X（13）
公开年 2012（13）
申请年 2012（8）  2011（5） 
专利权人 CHINESE ACAD.（9） SHANGHAI INS.（7） CHINESE ACAD.（3） DING G（2）
UNIV SOUTHEA.（2） XIE X（2）

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Graphene preparation includes depositing catalysis metal layer on substrate, implanting carbon ion in catalysis metal layer to form carbon atom saturated plane, and putting substrate in heating vacuum tube.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Graphene-modified platinum electrode for detection of trace amount of heavy metal, is obtained by depositing metal platinum electrode on silicon dioxide substrate and growing graphene on platinum electrode.

DING G, JIN Q, TANG F, XIE X, ZHANG F, ZHANG H, ZHAO J

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Graphene nano hole structure for carrier, has carrier table whose top surface comprises concentric circular holes, and copper mesh or silicon nitride layer formed on surface of carrier.

HE L, XU F, XU T, YIN K, SUN L, XIE X

Preparing graphene nanopore comprises providing graphene suspension on a carrier, placing the carrier in transmission electron microscope and converging at electron beam bombardment and protecting the pore by protective gas.

HE L, SUN L, XIE X, XU F, XU T, YIN K

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X