国家/地区 德国（20）
IPC部 H（15） C（13） B（10）
G（3） F（2）
IPC大类 H01（14） C01（10） B32（5）
B82（5） C08（5） H05（3）
C07（2） C09（2） G03（2）
IPC小类 C01B（10） H01L（10） B32B（5）
B82Y（5） H01B（4） H01G（3）
H01M（3） H05B（3） C07F（2）
C08J（2） C08K（2） C08L（2）
IPC C01B031/04（7） H01L029/16（6） C01B031/02（5）
H01L029/78（5） H01L029/06（4） B32B009/00（3）
B82Y030/00（3） H01B001/04（3） H01L021/336（3）
H01L029/786（3） H01L051/00（3） H01M004/04（3）
H01M004/36（3） H01M004/62（3） B82Y040/00（2）
发明人 DIMITRAKOPOULOS C（2）
公开年 2012（20）
申请年 2011（12）  2010（4）  2012（4） 
专利权人 INT BUSINESS.（5）

Low pressure shovel for e.g. steam turbine in airplane engine, has blade root connected to shovel blade and closing shovel blade in extension that is in radial alignment regarding axis, where shovel is made of monocrystalline graphene.

HAJE D

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R

Intermediate transfer member useful in apparatus for producing images, comprises a layer comprising phenoxy resin with graphene particles dispersed in it, surface layer comprising phenoxy resin, and a layer comprising phenoxy resin.

ROETKER M S, LOPEZ F J, TALLMANN K B, HERKO J H, MARTIN D W, GRIFFIN S J, KANUNGO M, TONG Y, TALLMAN K B

Adhesive useful for bonding aluminum-polyurethane composite material, comprises graphene oxide comprising epoxy, hydroxy or carboxylic acid group, and alkoxysilane compound comprising amine, epoxy, carboxylic acid, hydroxy or thiol group.

CHO H C, LEE S H, LEE D S, KANG K H, CHEOL C H, HUN L S, SU L D, HO G G, KANG K, LEE D, LEE S, CHO H

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Semiconductor device e.g. epitaxial graphene FET, has current channel which is provided between source and drain electrodes.

WEBER H, HERTEL S, KRIEGER M, KRACH F, JOBST J, WALDMANN D, WEBER H B

Vertical power semiconductor device e.g. insulated gate bipolar transistor (IGBT), has current path that is arranged between upper and lower contacts and is provided with graphene layer.

SCHULZE H, RUPP R, SCHULTZE H, RUP R

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A

Method for preparing graphene-based lithium iron phosphate/carbon composite material used in power battery, involves preparing phosphate/oxide precursor by dispersing ferric salt- and phosphate solution followed by drying obtained emulsion.

CAO Y, DU K, HU G, PENG Z, WU K, DU KE