国家/地区 美国（52）
IPC部 C（52）
IPC大类 C23（52）
IPC小类 C23C（50） C01B（34） H01L（20）
B82Y（18） B01J（10） H01B（9）
B32B（8） C30B（7） H01G（5）
B05D（4） H01M（4） C03C（3）
C08K（3） C09D（3） C23F（3）
IPC C23C016/26（30） C01B031/04（29） C01B031/02（19）
B82Y040/00（14） B82Y030/00（12） C01B032/186（9）
C23C016/44（9） H01L021/02（9） H01L029/16（7）
C23C016/02（6） H01L021/20（6） C23C016/06（5）
C23C016/455（5） C23C016/46（5） H01B001/04（5）
发明人 CHOI J（3） JUNG M（3） JUNG Y（3）
LI X（3） MOON J（3） AHN J（2）
AHN J R（2） CHO B J（2） CHOI M（2）
DAVIS M A（2） JUNG Y G（2） KIM J（2）
KIM J K（2） KIM J S（2） KIM T（2）
公开年 2014（52）
申请年 2013（31）  2014（14）  2012（7） 
专利权人 SAMSUNG ELEC.（5） LG ELECTRONI.（3） UNIV SUNGKYU.（3） AHN J（2）
BLUESTONE GL.（2） DAVIS M A（2） EMPIRE TECHN.（2） HANWHA TECHW.（2）
JUNG Y（2） KOREA ADVANC.（2） LI X（2） LIN Y（2）
POSCO（2） SAMSUNG TECH.（2） SHENZHEN CHI.（2） SOLAN LLC（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Method for synthesizing graphene thin film using chemical vapor deposition, involves positioning separator material adjacent to or in relationship with substrate to form composite, where composite is winded to provide coiled substrate.

LI X, WU J, NING H

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Forming system for graphene on substrate, has carbon-containing heating element which heats substrate by controlling feeding of process gas, and transports carbon to substrate surface for graphene growth, to form graphene sheet on substrate.

LI X

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H