国家/地区 韩国（7） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（8） A（3） H（3）
B（2） G（2）
IPC大类 C01（7） H01（3） A61（2）
C12（2） G01（2）
IPC小类 C01B（7） A61B（2） G01N（2）
H01L（2）
IPC C01B031/04（7） C01B032/182（2）
发明人 CHOI S（3） HYEON T（3） KIM D（3）
LEE H（3）
公开年 2016（8）
申请年 2014（3）  2015（3）  2016（2） 
专利权人 BASIC SCI INST（8）

Graphene bioelectronic device used in endoscope, consists of graphene composite layer comprising two or more graphene layers.

KIM D, HYEON T, CHOI S, LEE H, SONG C, LEE Y

Biosensor e.g. humidity sensor and pH sensor, consists of sensing unit including graphene layer, bridge unit connected to sensing unit, and electrode unit connected to bridge unit.

KIM D, HYEON T, CHOI S, LEE H, CHOI T

Producing graphene structure useful to produce electrode material for e.g. battery, supercapacitor and hydrogen storage material, comprises e.g. preparing graphene oxide solution containing functional group provides negative charge.

DUY T P, HEE L Y, KEUM D

Preparing heteroatom-doped graphene used as cathode material for lithium ion battery, involves heating mixture of alkali metal supply source and heteroatom precursor under inactive atmosphere.

SUNG Y E, PIAO Y, QUAN B, YU S H

Manufacturing method of graphene used for e.g. transparent electrode, placing graphite in ionic solution and applying first voltage, peeling of expanded graphite from aqueous acid solution and applying second voltage.

KIM S O, SHIM J W

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Graphene transfer process for large-area graphene used for electronic device e.g. flexible electronic devices involves incubating graphene/growth substrate with water vapor treatment, and coating vapor treated graphene/growth substrate.

YOU X, LUO D, RUOFF R S

Graphene hot electron nano-diode for optical detection device and energy conversion device, has electronic amplification type graphene layer, semiconductor layer forming Schottky junction with pinned layer, and electrodes.

LEE C, LEE H, LEE Y K, PARK J