国家/地区 中国（6）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（6）
IPC H01L021/336（4） H01L029/16（4） H01L029/78（4）
H01L029/10（3） H01L021/28（2）
发明人 WANG S（6）
公开年 2016（6）
申请年 2016（6） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（6）

Method for reducing metal and graphene contact resistance in graphene FET device, involves providing insulating substrate with metal layer, and evaporating thin metal layer for performing detects treatment process on graphene material layer.

JIN Z, MAO D, PENG S, WANG S, SHI J, ZHANG D

Method for preparing graphene field effect transistor, involves transferring graphene material on substrate, preparing source and drain electrodes, performing photolithography followed by applying medium and forming graphene nanobelts.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing metal graphene dual-sided contact structure for graphene electronic device, involves exposing photo-resist material, forming upper layer metal pattern, and forming self-aligned double-metal contact structure of graphene.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for manufacturing graphene field effect transistor, involves providing silicon substrate, forming insulating layer on silicon substrate, followed by forming leakage electrode on insulation layer, and forming graphene-based channel.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing graphene field effect transistor, involves providing insulating substrate, forming graphene conductive layer, depositing gate dielectric layer followed by etching gate dielectric layer and forming source electrode.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for producing graphene field-effect transistor, involves orderly forming graphene, grade medium layer and top grade metal electrode layer on substrate, followed by forming metal layer on thin film devices and annealing.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D