国家/地区 韩国（7）
IPC部 C（6） B（4）
IPC大类 C01（4） B01（3） C08（2）
C23（2）
IPC小类 C01B（4） B01J（3） C08J（2）
C23C（2）
IPC C01B032/194（3） B01J019/08（2）
发明人 AHN S（7）
公开年 2021（7）
申请年 2019（5）  2020（2） 
专利权人 KOREA INST S.（6）

Graphene composite barrier film comprises organic thin film provided on inorganic thin film, graphene film, and primer layer provided between organic thin film and graphene film.

KIM M J, JANG S G, AHN S, TAE Y H, KIM J H, KIM H

Method for manufacturing three-dimensional laminated structure of photosensor, involves forming quantum dot layer with quantum dots of core-shell structure on portion of detailed block layer, and forming multilayer structure with detailed block layers.

IK S D, AHN S, JAE P Y, LEE K S

Manufacturing electrode for reducing carbon dioxide comprises electrodepositing nickel on carbon material in electrolyte solution containing nickel precursor and immersing nickel electrodeposited carbon material in electrolyte solution.

SEO M, GI M, LEE M J, KIM J Y, KIM J, AHN S, KIM S Y

Graphene powder useful for manufacturing energy materials, electronic materials, capacitors, catalysts, gas sensors, biosensors and fuel cells, comprises graphite powder and graphene oxide.

KIM M J, DONG K, LEE H S, JANG S G, AHN S, CHUNG Y

Producing double-layer graphene useful in electronic device comprises preparing catalyst substrate, forming first graphene layer by providing carbon source on the catalyst substrate, and forming diffusion site in the first graphene.

KIM M J, LEE H S, JANG S G, AHN S, RYU J H

Producing reduced graphene oxide comprises e.g. filling mixed solution for dispersing graphene oxide powder in chamber equipped with carbon-based conductive wire and applying electric power to electrically explode carbon material.

HWANG J Y, NAM J, GI L W, AHN S, LEE J O, LEEGEONHEE

Graphene complex used in gas barrier film, comprises graphene layer in which defect region that includes structural defect is present, and defect healing structure formed adjacent to defect region or bonding region.

AHN S, KIM Y J, IK S D, HWANG J Y