国家/地区 中国（17） 美国（10） 韩国（4） 台湾（4） 世界知识产权组织（4） 英国（3）
IPC部 C（34）
IPC大类 C23（34）
IPC小类 C23C（34）
IPC C23C016/455（34）
发明人 DIXON S（3） LI J（3） GUINEY I（2）
JAGT R（2） KAINTH J（2） WANG L（2）
WANG Y（2）
公开年 2022（34）
申请年 2021（15）  2022（14）  2020（5） 
专利权人 PARAGRAF LTD（3） BEIJING GRAP.（2） DAEGU GYEONG.（2） UNIV PEKING（2）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Lifting metal-based composite material mechanical property using titanium dioxide surface modified graphene, comprises e.g. pouring graphene raw material into acid solution, pickling, ultrasonically cleaning, filtering, drying, low-energy ball milling, heating, pressurizing and sintering.

TANG B, CHEN M, WAN J, GE H, YAN Q, CHEN B, LI J

Preparing nanoparticles on a substrate for composite, involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the substrate and the micro-sized particles or the salt precursors.

YAO Y, CHEN Y, HU L

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Method for preparing self-cleaning composite surface enhanced Raman scattering (SERS) substrate used in surface science, analysis science and biological science involves sputtering gold nano-particles to surface of zinc oxide film to obtain SERS substrate.

LI J, ZHANG X, SHI G, WANG B, ZHANG J

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Converting in-situ amorphous carbon into graphene film useful in e.g. field of flexible electronic device and solar cell, comprises e.g. using physical vapor deposition technology to prepare graphene film precursor, and annealing the precursor to obtain graphene film under vacuum condition.

YANG L, WANG Y, WANG A, WANG Z, WANG L