国家/地区 英国（13）
IPC部 C（13）
IPC大类 C01（13） C23（4） H01（4）
B05（2） C30（2）
IPC小类 C01B（13）
IPC C01B032/186（5） C01B032/182（4） C23C016/26（4）
C01B032/184（3） C01B032/19（3） H01L021/02（3）
C23C016/02（2） C23C016/40（2） C23C016/455（2）
C30B025/18（2） C30B029/02（2） H01L029/16（2）
发明人 DIXON S（6） GUINEY I（6） GRIFFIN R M（4）
THOMAS S（4） BADCOCK T J（3） KAINTH J（2）
公开年 2022（13）
申请年 2021（6）  2022（6） 
专利权人 PARAGRAF LTD（6）

Face mask for use as personal protective equipment, comprises layer comprising surface-functionalized graphene particles having specified sulfur impurity level, manganese level, and/or nitrogen oxide level.

PROMNIMIT A

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Spray gun used to spray deposition of two-dimensional materials, comprises housing capable of accepting propulsion device for propulsion of material and nozzle for directing material to be sprayed by the gun.

FORRESTER D M

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Producing graphene comprises mixing expanded graphite in liquid to provide mixture, and exfoliating expanded graphite by exposing mixture to high shear mixing assembly.

BOHM H L M, BOHM S

Producing graphene used e.g. in filter, involves providing polymeric graphene precursor comprising donor atoms, subjecting polymeric graphene precursor to bulk thermal heat treatment to produce graphene and subjecting graphene to mechanical exfoliation treatments.

HUANG Y, LI L

Method for continuously mass-manufacturing high-purity graphene by using e.g. high frequency plasma, involves allowing expandable graphite and graphite intercalation compounds to be expanded by thermal plasma treatment such that graphene is exfoliated.

NGUYEN D H, CHOI S H, BAE K J