国家/地区 韩国（8）
IPC部 B（8）
IPC大类 B01（8） C01（5） G03（4）
G01（3） H01（3） C23（2）
IPC小类 B01J（8）
IPC B01J019/08（3） C01B032/184（3） C01B032/194（3）
G03F001/62（3） C01B032/186（2） G03F001/22（2）
H01L021/768（2）
发明人 KIM H（2） KIM H Y（2） KIM S H（2）
KIM S K（2） MI K H（2）
公开年 2022（8）
申请年 2021（3）  2022（3）  2020（2） 
专利权人 KOREA ELECTR.（2） UNIV PUSAN N.（2）

Preparing adsorbent for skin aging diagnosis based on body odor volatile marker by forming graphene oxide (GO)-doped polyaniline (PANI) compound layer through electrochemical polymerization reaction, growing zinc oxide nanorods on compound layer, and reacting with 2-methylimidazole solution.

BAE S Y, KIM S H, BAE S, OMITTED

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Metal-organic framework-based catalyst for composition for three-dimensional (3D) printing, for 3D printed electrode for sensing oxygen, comprises metal salts, and carbon framework doped with nitrogen, where metal salt is bonded to carbon atom of framework.

SHIM Y, PARK D S, LEE S K, LEE J H, KIM S H, GON L S, LEE J, KIMSANGHUN

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Method for fabricating topological semi-metal interconnect, involves forming dielectric layer between interconnects, and forming hermetic cap layer on top of one or more interconnect.

NOGAMI T, NARAYANAN V, LANZILLO N A, CHEN C, RANJILO N A

Laser-induced carbon material having 3D porous structure produced by irradiating a laser beam on upper surface of the base substrate useful in humidity sensor.

SHIN B S, LEEJUNWOOK, MA Y W, HO K C