国家/地区 中国（26）
IPC部 C（17） H（14） B（5）
D（2） G（2）
IPC大类 C01（13） H01（12） B82（3）
B01（2） D06（2） G01（2）
IPC小类 C01B（13） H01L（8） B82Y（3）
H01M（3） B01J（2） D06M（2）
G01N（2）
IPC C01B031/04（13） H01L029/78（4） H01L029/423（3）
C01B031/02（2） D06M011/74（2） G01N021/64（2）
H01M004/587（2）
发明人 ZHANG C（26）
公开年 2013（14） 2012（8） 2014（4）
申请年 2012（26）
专利权人 UNIV XIDIAN（10） UNIV SHANDON.（2） UNIV SHENYAN.（2） UNIV TSINGHU.（2）
UNIV YANSHAN（2）

Preparation of graphene composite anode material used in lithium-ion battery for electric vehicles, by carrying out Hummer's method for preparing graphene oxide, and reduction-oxidation processing.

ZHANG C

Preparation of phosphorus-doped graphene used for oxygen reduction reaction catalysis involves reacting graphite oxide and organic phosphorus compound.

HOU Y, ZHANG C

Preparation of poly-1,5-diamino anthraquinone-modified graphene nanocomposite material used for, e.g. supercapacitor by preprocessing mixed sol solution, reacting in insulator, washing with deionized water, and adding to reducing solution.

WANG Y, WANG D, ZHANG C, WU X, HE D

Making carbon nano tube/graphene oxide/nano iron oxide sandwich hybrid wave-absorbing thin film involves making graphene oxide-carbon nano-tube aqueous solution, and nano iron oxide dispersion followed by subjecting to vacuum suction device.

ZHANG C, LU S, NIE P, WANG J, CENG X

New substituted three-dimensional triptycene graphene compounds useful in cell imaging.

LIU Y, WANG J, XU H, ZHANG C, YANG X, PAN K, PENG L

Graphene FET has source electrode and drain electrode that are respectively located at two ends of graphene channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Graphene nano-belt FET, has gate dielectric layer placed at upper and lower sides of channel layer, substrate formed with gate dielectric layer, and source electrode and drain electrode placed at two ends of channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Graphene nanoribbon FET comprises gate dielectric layers that are respectively located at upper side and lower side of channel layer, and source and drain electrodes that are respectively located at ends of channel layer.

ZHANG P, WU Y, BAO J, MA Z, ZHUANG Y, ZHANG C

Graphene FET, has substrate formed with gate dielectric layer, source electrode and drain electrode that are respectively located at two ends of graphene channel layer, and top gate electrode arranged on top part of gate dielectric layer.

MA Z, ZHANG P, ZHANG C, ZHUANG Y, BAO J, WU Y

Aluminum-copper graphene nano material overhead transmission guide line, has outer layer fixed on inner layer, and composite wire unit whose circular cross section is made of carbon fiber composite material.

ZHANG C, LIU Q, ZHU K, SI J, LI X, JIANG C, AI Z