国家/地区 中国（8）
IPC部 B（4） C（4） H（3）
A（2）
IPC大类 B01（3） H01（3） A62（2）
C02（2）
IPC小类 B01J（3） A62D（2） C02F（2）
H01L（2）
IPC B01J023/14（3） A62D003/115（2）
发明人 WANG W（8）
公开年 2011（8）
申请年 2011（6） 
专利权人 UNIV CHANGAN（4） CHINESE ACAD.（2）

Graphene imaging method, involves transferring large area graphene film to imaged substrate with groove from solution, and breaking graphene in groove area via surface tension of solution to obtain required imaged graphene.

LI T, WANG W, WANG Y

Catalyst filling used in three-dimensional electrodes comprises aluminum oxide particle electrode and tin dioxide loaded on the aluminum oxide particle electrode and modified by graphene.

CHEN J, FEI X, WANG W, WU Y, YANG S, ZHANG B, ZHAO Y, ZHOU M, ZHU T

Composite electrocatalyst is formed by loading stannic oxide which is modified by graphene on sepiolite.

CHEN J, DING F, FEI X, WANG W, WU Y, YANG S, ZHAO Y, ZHOU M, ZHU T

Preparation of graphene film involves obtaining electroplated copper substrate, growing graphene on substrate by heating under normal pressure by chemical vapor deposition using methane and mixed gas of argon and hydrogen and cooling.

LI T, WANG W, WANG Y, ZHOU Y

Graphene-modified tin dioxide electrocatalyst comprises graphene and tin dioxide at specified mass ratio.

CHEN J, FEI X, LI S, WANG W, WU Y, YANG S, ZHAO Y, ZHOU M, ZHU T

Electrolytic electrode comprises titanium soleplate and graphene modified tin dioxide loaded on titanium soleplate.

ZHU T, CHEN J, ZHOU M, WANG W, YANG S, FEI X, ZHAO Y

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T