国家/地区 中国（19）
IPC部 H（13） C（7） B（5）
IPC大类 H01（11） C01（3） B82（2）
C08（2） H05（2）
IPC小类 H01L（6） H01G（4） C01B（3）
B82Y（2） C08K（2） C08L（2）
H05B（2）
IPC H01L029/49（3） C01B031/04（2） C08K003/04（2）
H01G011/32（2） H01G011/86（2） H01L029/06（2）
H01L029/36（2） H01L029/78（2） H05B003/86（2）
发明人 WANG W（19）
公开年 2013（19）
申请年 2013（14）  2012（5） 
专利权人 UNIV NANJING.（6） UNIV CHANGZH.（3） CHANGZHOU JI.（2） JIANGSU INTE.（2）
UNIV NANJING.（2）

Organic electrolyte-system asymmetric electrochemical capacitor comprises cathode material which is soft graphene film, positive pole material, organic electrolyte, and membrane which is porous polypropylene film.

CAO J, XU J, ZHAO M, CHEN Z, WANG W

Synthesis of Janus graphene sheet layer involves cooling graphite, adding sulfuric acid and potassium chlorate to obtain graphite oxide, dissolving in ethanol with polystyrene, and reacting with poly(2-dimethylaminoethyl methacrylate).

WANG W, HE C, LI Y

Method for preparing high-conductive flexible graphene film electrode, involves cutting prepared graphene film into required shape for obtaining high-conductive flexible graphene film electrode according to application requirements.

CAO J, CHEN Z, WANG W, XU J, WEI X

Preparing co-cured damping material, comprises adding lead zirconate titanate fiber and graphene into epoxy resin, adding amine curing agent, polarizing obtained viscoelastic sheet, paving carbon fiber cloth and curing.

FAN J, GUO J, HU P, LI C, LI H, LI Y, NI N, WANG P, WANG W, YANG Y

Tin dioxide/boron-doped graphene nano-composite material for electronic devices, comprises tin oxide and boron-doped graphene, and is prepared by mixing graphene with mixed solution to obtain oxidized graphite alkene.

HAO Q, LEI W, LIU P, WANG W, XIA X, WANG X

Manufacture of graphene-doped composite electrode for dye-sensitized solar cell, involves preparing slurry using titanium dioxide-graphene composite nanoparticle and printing on titanium dioxide-array provided on glass substrate.

WANG W, ZHANG H, WANG R

FET integrated heterogeneous material graphite nano-gate structure, has FET provided with source region and drain region that are made of intrinsic semiconductor graphene nanometer belt.

YANG X, WANG W, XIA C, XIAO G

Double-material hetero-gate field effect transistor, has material heterogeneous grid provided with two conductive metal materials, intrinsic graphene material provided with conduction channel, and underlap region provided with drain region.

YAN S, WANG W, WANG Y

Preparation of graphene oxide loaded gold-palladium or gold-silver double-metal nanoparticles for e.g. methanol fuel cell, involves mixing graphene oxide, sodium hydroxide, palladium chloride and bimetallic nanoparticles.

GAO J, GUO Y, WANG W, WU T, ZHANG N

Halo-doped double-heterojunction material graphene strip has source electrode and drain electrode which are respectively provided with same length of source region and drain region.

WANG W, XIA C, XIAO G