国家/地区 中国（11）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/184（11）
发明人 LI X（3） LIU W（2） YAO C（2）
ZUO S（2）
公开年 2016（3） 2017（2） 2018（2） 2020（2）
申请年 2015（2）  2016（2）  2017（2）  2020（2） 
专利权人

Preparing graphene involves etching the carbon alloy with etching solution to remove non-carbon elements in the carbon-containing alloy to obtain graphene, etching solution includes one to three of hydrochloric acid, sulfuric acid.

ZHONG L, WANG X, XU L, ZHANG Q, ZHOU Y, LIU H, WANG Y

Preparing cerium oxide nanorod array/graphene composite material for photocathode protection, involves using conductive substrate as substrate, cerium salt solution as electrolyte and potassium chloride as auxiliary electrolyte.

YAO C, ZUO S, YAN X, LI X, LIU W, WANG C, YE L, WU H

Preparing aluminum/reduced graphene oxide/silver nano composite film comprises e.g. etching the aluminum sheet as substrate in sodium hydroxide solution, water washing, drying, soaking in graphene oxide dispersion, and taking out.

LI X, CAO L, GAO S, QIN L, KANG S

Preparation of anatase-type flower-shaped diamond titanium dioxide/graphene composite material for photocathode, involves stirring titanium tetrachloride solution and graphene oxide dispersion liquid, heating, cooling, washing and drying.

YAO C, WANG P, ZUO S, LIU W, LI X

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Device used e.g. for etching continuous substrate and graphene comprises feeding and etching device.

ZHANG H, LI T, TAN H

Preparation of graphene hollow fiber used in e.g. sensing applications, involves immersing copper wire in graphene oxide electrolyte, coating graphene on wire surface, rolling, immersing in ferric chloride aqueous solution and cleaning.

WENG W, ZHU M, YANG J, DU X

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K