国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6） C23C（5） H01L（3）
C23F（2）
IPC C01B032/186（6）
发明人
公开年 2015（3） 2016（3）
申请年 2015（6）
专利权人

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L