国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7） C30（2） G01（2）
H01（2）
IPC小类 C23C（7） C30B（2） G01N（2）
H01L（2）
IPC C23C014/58（7）
发明人 HU J（3） HU Y（3） LI P（3）
PAN M（3） PENG J（3） QIU W（3）
公开年 2020（7）
申请年 2020（6） 
专利权人 UNIV NAT DEF.（3）

Composite nano-film material used for gas-sensitive sensor element, comprises zinc oxide nanosheet as main component and covered with graphene quantum dot, and tin dioxide quantum crystal grain having preset average size.

SHAO S, LIN J, XIA Y, LIU X

Preparing graphene using amorphous carbon at low temperature comprises e.g. taking magnetic metal of nickel, iron or cobalt in vacuum cavity, setting electromagnet and forming plasma atmosphere restricted by closed magnetic field.

WU Y, YU S, LIU Y, GAO J, HEI H, ZHOU B, MA Y

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

Preparing ferromagnetic/graphene epitaxial interface involves growing ferromagnetic film with hexagonal symmetrical lattice properties on insulating substrate, insulating substrate is same as ferromagnetic film base.

PAN M, QIU W, HU J, LI P, PENG J, WU R, HU Y

Method for manufacturing SERS substrate based on graphene quantum dot array, involves placing semi-finished product into magnetron sputtering device, and selecting metal oxide from titanium dioxide, zinc oxide, tin dioxide and indium oxide.

SUI X

Preparing sulfur ion implanted nano diamond-graphene composite film involves mixing and dispersing diamond powder and glycerin uniformly, polishing single crystal silicon wafer by using obtained diamond powder polishing paste.

HU X, JIANG M, CHEN C, LI X